The global ferroelectric RAM market size reached US$ 313.8 Million in 2022. Looking forward, IMARC Group expects the market to reach US$ 381.2 Million by 2028, exhibiting a growth rate (CAGR) of 3.4% during 2023-2028.
A ferroelectric random-access memory (RAM), or FRAM, refers to a RAM that provides faster read-and-write access of dynamic RAM. It consists of a thin ferroelectric film made of lead zirconate titanate (PZT), a bit line and a capacitor connected to a plate. Serial and parallel memory are two of the primarily used FRAM, which are installed in consumer electronics, such as personal digital assistants (PDAs), smartphones and wireless products, smart meters, automobile electronics, smart cards and medical and wearable devices. In comparison to the traditionally used flash drives, FRAM consumes lesser power and offers a higher number of write-erase cycles and faster write performance.
Significant growth in the information technology (IT) industry across the globe represents one of the key factors creating a positive outlook for the market. Furthermore, the widespread adoption of electronic handheld devices is also driving the market growth. Smart meter manufacturers are also adopting FRAM to operate battery-powered wireless sensors to increase the operational life and minimize the overall maintenance costs. This, in turn, is further strengthening the market growth. Additionally, various technological advancements, such as the integration of the Industrial Internet of Things (IIoT) and cloud computing solutions with connected devices, are acting as other growth-inducing factors. Modern FRAM is being used for applications that require continuous, high-frequency and highly reliable data logging for the test and measurement of factory equipment and non-volatile data capture of industrial processes. Other factors, including increasing industrial automation, along with extensive research and development (R&D) activities, are anticipated to drive the market further.
Key Market Segmentation:
IMARC Group provides an analysis of the key trends in each sub-segment of the global ferroelectric RAM market report, along with forecasts at the global, regional and country level from 2023-2028. Our report has categorized the market based on type, application and end use.
Breakup by Type:
Breakup by Application:
Breakup by End Use:
Breakup by Region:
Middle East and Africa
The report has also analysed the competitive landscape of the market with some of the key players being Fujitsu Limited (Furukawa Group), Infineon Technologies AG, International Business Machines Corporation, LAPIS Semiconductor Co. Ltd. (Rohm Semiconductor), Samsung Electronics Co. Ltd., Texas Instruments Incorporated and Toshiba Corporation.
Base Year of the Analysis
Type, Application, End Use, Region
Asia Pacific, Europe, North America, Latin America, Middle East and Africa
United States, Canada, Germany, France, United Kingdom, Italy, Spain, Russia, China, Japan, India, South Korea, Australia, Indonesia, Brazil, Mexico
Fujitsu Limited (Furukawa Group), Infineon Technologies AG, International Business Machines Corporation, LAPIS Semiconductor Co. Ltd. (Rohm Semiconductor), Samsung Electronics Co. Ltd., Texas Instruments Incorporated and Toshiba Corporation
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Key Questions Answered in This Report
The global ferroelectric RAM market was valued at US$ 313.8 Million in 2022.
We expect the global ferroelectric RAM market to exhibit a CAGR of 3.4% during 2023-2028.
The growing adoption of ferroelectric RAM in manufacturing smart meters to operate battery-
powered wireless sensors for increasing operational life and minimizing maintenance costs is
primarily driving the global ferroelectric RAM market.
The sudden outbreak of the COVID-19 pandemic had led to the implementation of stringent
lockdown regulations across several nations, resulting in the temporary closure of various
manufacturing units for ferroelectric RAM.
Based on the type, the global ferroelectric RAM market can be segregated into serial memory,
parallel memory, and others. Among these, parallel memory currently exhibits a clear dominance in
Based on the application, the global ferroelectric RAM market has been categorized into mass
storage, embedded storage, and others. Currently, mass storage holds the majority of the total
On a regional level, the market has been classified into North America, Asia Pacific, Europe, Latin
America, and Middle East and Africa, where North America currently dominates the global market.
Some of the major players in the global ferroelectric RAM market include Fujitsu Limited (Furukawa
Group), Infineon Technologies AG, International Business Machines Corporation, LAPIS
Semiconductor Co. Ltd. (Rohm Semiconductor), Samsung Electronics Co. Ltd., Texas Instruments
Incorporated, and Toshiba Corporation.
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