GaN Power Device Market Report by Device Type (Power Device, RF Power Device), Voltage Range (<200 Volt, 200–600 Volt, >600 Volt), Application (Power Drives, Power Supply Systems, Radio Frequency Based Systems), End-Use Industry (Telecommunications, Automotive, Renewable Power Generation, Military, Aerospace and Defense, Consumer Electronics, and Others), and Region 2024-2032

GaN Power Device Market Report by Device Type (Power Device, RF Power Device), Voltage Range (<200 Volt, 200–600 Volt, >600 Volt), Application (Power Drives, Power Supply Systems, Radio Frequency Based Systems), End-Use Industry (Telecommunications, Automotive, Renewable Power Generation, Military, Aerospace and Defense, Consumer Electronics, and Others), and Region 2024-2032

Report Format: PDF+Excel | Report ID: SR112024A2281
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Market Overview 2024-2032:

The global GaN power device market size reached US$ 347.5 Million in 2023. Looking forward, IMARC Group expects the market to reach US$ 3,864.9 Million by 2032, exhibiting a growth rate (CAGR) of 29.8% during 2024-2032.

Report Attribute 
Key Statistics
Base Year
2023
Forecast Years
2024-2032
Historical Years
2018-2023
Market Size in 2023
US$ 347.5 Million
Market Forecast in 2032
US$ 3,864.9 Million
Market Growth Rate 2024-2032 29.8%


The gallium nitride (GaN) power device is a high electron mobility (HEMT) transistor that produces electrical energy by the controlling the freely moving electrons in the wide bandgap of the semiconductor. As compared to silicon metal-oxide-semiconductor field-effect transistor (MOSFET), the GaN power device has lower on-resistance, lesser output capacitance and higher electric-field strength. It also conducts more electrons, reduces switch node ringing and increases efficiency. Besides this, it is compact, fast and lightweight, owing to which it is gaining traction in commercial and industrial applications across various industrial products.

Global GaN Power Device Market

The market is presently being driven by the extensive utilization of GaN power devices in various end use industries. For instance, it is used in the lighting and braking control systems in electric vehicles (EVs) and hybrid electric vehicles (HEVs). Governments of several countries are introducing stringent policies on greenhouse gas (GHG) emissions, which is boosting the sales of EVs and HEVs around the world. They are also promoting the adoption of energy-efficient devices, which is further influencing the demand for GaN power devices in the defense and aerospace industries. Apart from this, these devices are utilized in radars to enhance navigation, avoid collision and enable real-time air traffic control. Moreover, they are employed in the manufacturing of healthcare scanning equipment, such as sonograms, magnetic resonance imaging (MRI) and miniaturized X-ray machines, to provide precision while performing surgeries. Furthermore, they are used in small cell, distributed antenna systems (DAS) and remote radio head network densification. Besides this, the increasing adoption of the internet of things (IoT) technology, along with the introduction of 5G technology, is expected to create lucrative opportunities for manufacturers in the coming years.

Key Market Segmentation:

IMARC Group provides an analysis of the key trends in each sub-segment of the global GaN power device market report, along with forecasts at the global, regional and country level from 2024-2032. Our report has categorized the market based on device type, voltage range, application and end-use industry.

Breakup by Device Type:

  • Power Device
    • Discrete Power Device
    • Integrated Power Device
  • RF Power Device
    • Discrete RF Power Device
    • Integrated RF Power Device
       

Breakup by Voltage Range:

  • <200 Volt
  • 200–600 Volt
  • >600 Volt
     

Breakup by Application:

  • Power Drives
  • Power Supply Systems
  • Radio Frequency Based Systems
     

Breakup by End-Use Industry:

  • Telecommunications
  • Automotive
  • Renewable Power Generation
  • Military
  • Aerospace and Defense
  • Consumer Electronics
  • Others
     

Breakup by Region:

  • North America
    • United States
    • Canada
  • Asia Pacific
    • China
    • Japan
    • India
    • South Korea
    • Australia
    • Indonesia
    • Others
  • Europe
    • Germany
    • France
    • United Kingdom
    • Italy
    • Spain
    • Russia
    • Others
  • Latin America
    • Brazil
    • Mexico
    • Others
  • Middle East and Africa


Competitive Landscape:

The report has also analysed the competitive landscape of the market with some of the key players being Efficient Power Conversion, GaN Systems Inc., IQE, Koninklijke Philips N.V., MACOM Technology Solutions, Microsemi Corporation (Microchip Technology Inc.), Mitsubishi Electric Corporation, Navitas Semiconductor Inc., Qorvo Inc., Sumitomo Electric Industries Ltd., Texas Instruments Incorporated, Toshiba Corporation, Wolfspeed Inc. (Cree Inc.), etc.

Report Coverage:

Report Features Details
Base Year of the Analysis 2023
Historical Period 2018-2023
Forecast Period 2024-2032
Units US$ Million
Segment Coverage Device Type, Voltage Range, Application, End-Use Industry, Region
Region Covered Asia Pacific, Europe, North America, Latin America, Middle East and Africa
Countries Covered United States, Canada, Germany, France, United Kingdom, Italy, Spain, Russia, China, Japan, India, South Korea, Australia, Indonesia, Brazil, Mexico
Companies Covered Efficient Power Conversion, GaN Systems Inc., IQE, Koninklijke Philips N.V., MACOM Technology Solutions, Microsemi Corporation (Microchip Technology Inc.), Mitsubishi Electric Corporation, Navitas Semiconductor Inc., Qorvo Inc., Sumitomo Electric Industries Ltd., Texas Instruments Incorporated, Toshiba Corporation, Wolfspeed Inc. (Cree Inc.)
Customization Scope 10% Free Customization
Report Price and Purchase Option Single User License: US$ 3899
Five User License: US$ 4899
Corporate License: US$ 5899
Post-Sale Analyst Support 10-12 Weeks
Delivery Format PDF and Excel through Email (We can also provide the editable version of the report in PPT/Word format on special request)

Key Questions Answered in This Report

The global GaN power device market was valued at US$ 347.5 Million in 2023.

We expect the global GaN power device market to exhibit a CAGR of 29.8% during 2024-2032.

The sudden outbreak of the COVID-19 pandemic had led to the implementation of stringent lockdown regulations across several nations resulting in temporary closure of numerous manufacturing units for GaN power devices.

The rising adoption of GaN power device in the radars used across the defense and aerospace industries to enhance navigation, avoid collision, and enable real-time air traffic control, is primarily driving the global GaN power device market.

Based on the end-use industry, the global GaN power device market can be segmented into telecommunications, automotive, renewable power generation, military, aerospace and defense, consumer electronics, and others. Currently, the telecommunications industry holds the majority of the total market share.

On a regional level, the market has been classified into North America, Asia Pacific, Europe, Latin America, and Middle East and Africa, where North America currently dominates the global market.

Some of the major players in the global GaN power device market include Efficient Power Conversion, GaN Systems Inc., IQE, Koninklijke Philips N.V., MACOM Technology Solutions, Microsemi Corporation (Microchip Technology Inc.), Mitsubishi Electric Corporation, Navitas Semiconductor Inc., Qorvo Inc., Sumitomo Electric Industries Ltd., Texas Instruments Incorporated, Toshiba Corporation, Wolfspeed Inc. (Cree Inc.), etc.

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GaN Power Device Market Report by Device Type (Power Device, RF Power Device), Voltage Range (<200 Volt, 200–600 Volt, >600 Volt), Application (Power Drives, Power Supply Systems, Radio Frequency Based Systems), End-Use Industry (Telecommunications, Automotive, Renewable Power Generation, Military, Aerospace and Defense, Consumer Electronics, and Others), and Region 2024-2032
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