Market Overview:
The global next generation memory market reached a value of US$ 3.68 Billion in 2021. Looking forward, IMARC Group expects the market to reach a value of US$ 16.98 Billion by 2027, exhibiting a CAGR of 27.60% during 2022-2027. Keeping in mind the uncertainties of COVID-19, we are continuously tracking and evaluating the direct as well as the indirect influence of the pandemic on different end use industries. These insights are included in the report as a major market contributor.
Next generation memory refers to a fast, efficient and cost-effective storage solution that can store more data than silicon chips. It consequently finds extensive applications in the telecommunications, information technology (IT), and banking, financial services and insurance (BFSI) industries across the globe. At present, there is a surge in the requirement for high bandwidth, low power consumption, and highly scalable memory devices that rely on artificial intelligence (AI), the Internet of things (IoT), big data and other technologies. This, in turn, is catalyzing the demand for next generation memory.
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Note: Information in the above chart consists of dummy data and is only shown here for representation purpose. Kindly contact us for the actual market size and trends.
Next Generation Memory Market Trends:
There is presently a significant rise in the traction of universal memory worldwide. This, in confluence with the burgeoning electronics industry, represents one of the key factors bolstering the growth of the market. Apart from this, with the growing sales of smartphones, tablets, universal serial bus (USB) drives, and solid-state drives (SSD), the demand for NOT-AND (NAND) flash memory, which is a type of non-volatile storage technology that does not need energy to retain data is also increasing. Besides this, high-bandwidth memory (HBM), a next generation memory technology for graphics, is rapidly being used in leading-edge graphics, networking, high-performance computing (HPC), and artificial intelligence (AI) systems. For instance, it is utilized in decoders, fully autonomous vehicles, neural network designs, and other advanced applications that require low power and enormous bandwidth. This, coupled with the rising usage of wearable devices, is facilitating the growth of the market. Other factors, such as the increasing use of connected cars and considerable growth in the IT industry, are projected to create a positive outlook for the market in the upcoming years.
Key Market Segmentation:
IMARC Group provides an analysis of the key trends in each sub-segment of the global next generation memory market, along with forecasts at the global, regional and country level from 2022-2027. Our report has categorized the market based on technology, wafer size, storage type and application
Breakup by Technology:
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Note: Information in the above chart consists of dummy data and is only shown here for representation purpose. Kindly contact us for the actual market size and trends.
- Non-Volatile
- Magneto-Resistive Random-Access Memory (MRAM)
- Ferroelectric RAM (FRAM)
- Resistive Random-Access Memory (ReRAM)
- 3D Xpoint
- Nano RAM
- Other Non-Volatile Technologies (Phase change RAM, STT-RAM, and SRAM)
- Volatile
- Hybrid Memory Cube (HMC)
- High-Bandwidth Memory (HBM)
Breakup by Wafer Size:
Breakup by Storage Type:
- Mass Storage
- Embedded Storage
- Others
Breakup by Application:
- BFSI
- Consumer Electronics
- Government
- Telecommunications
- Information Technology
- Others
Breakup by Region:
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- North America
- Asia-Pacific
- China
- Japan
- India
- South Korea
- Australia
- Indonesia
- Others
- Europe
- Germany
- France
- United Kingdom
- Italy
- Spain
- Russia
- Others
- Latin America
- Middle East and Africa
Competitive Landscape:
The competitive landscape of the industry has also been examined along with the profiles of the key players being Avalanche Technology, Crossbar Inc., Fujitsu Limited, Honeywell International Inc., Infineon Technologies AG, Intel Corporation, Micron Technology Inc., Nantero Inc., Samsung Electronics Co. Ltd., SK hynix Inc., Spin Memory Inc. and Taiwan Semiconductor Manufacturing Co. Ltd.
Report Coverage:
Report Features |
Details |
Base Year of the Analysis |
2021 |
Historical Period |
2016-2021 |
Forecast Period |
2022-2027 |
Units |
US$ Billion |
Segment Coverage |
Technology, Wafer Size, Storage Type, Application, Region |
Region Covered |
Asia Pacific, Europe, North America, Latin America, Middle East and Africa |
Countries Covered |
United States, Canada, Germany, France, United Kingdom, Italy, Spain, Russia, China, Japan, India, South Korea, Australia, Indonesia, Brazil, Mexico |
Companies Covered |
Avalanche Technology, Crossbar Inc., Fujitsu Limited, Honeywell International Inc., Infineon Technologies AG, Intel Corporation, Micron Technology Inc., Nantero Inc., Samsung Electronics Co. Ltd., SK hynix Inc., Spin Memory Inc. and Taiwan Semiconductor Manufacturing Co. Ltd. |
Customization Scope |
10% Free Customization |
Report Price and Purchase Option |
Single User License: US$ 2499
Five User License: US$ 3499
Corporate License: US$ 4499 |
Post-Sale Analyst Support |
10-12 Weeks |
Delivery Format |
PDF and Excel through Email (We can also provide the editable version of the report in PPT/Word format on special request) |
Key Questions Answered in This Report:
- How has the global next generation memory market performed so far and how will it perform in the coming years?
- What has been the impact of COVID-19 on the global next generation memory market?
- What are the key regional markets?
- What is the breakup of the market based on the technology?
- What is the breakup of the market based on the wafer size?
- What is the breakup of the market based on the storage type?
- What is the breakup of the market based on the application?
- What are the various stages in the value chain of the industry?
- What are the key driving factors and challenges in the industry?
- What is the structure of the global next generation memory market and who are the key players?
- What is the degree of competition in the industry?