Global GaN Power Device Market to Grow at 29.8% During 2024-2032, Bolstered by Increasing Industrial Applications

October 05, 2021 | Heavy Industry

As per the latest report by IMARC Group, titled “GaN Power Device Market Report by Device Type (Power Device, RF Power Device), Voltage Range (<200 Volt, 200–600 Volt, >600 Volt), Application (Power Drives, Power Supply Systems, Radio Frequency Based Systems), End-Use Industry (Telecommunications, Automotive, Renewable Power Generation, Military, Aerospace and Defense, Consumer Electronics, and Others), and Region 2024-2032,” the global GaN power device market reached a value of US$ 347.5 Million in 2023. A gallium nitride (GaN) power device refers to a high electron mobility transistor (HEMT) that controls the free-moving electrons in the wide bandgap of semiconductors to generate electrical energy. It has higher electric-field strength, lesser on-resistance and lower output capacitance than silicon metal-oxide-semiconductor field-effect transistors (MOSFET). In recent years, GaN power devices have gained traction as they improve efficiency, conduct more electrons and decrease switch node ringing.

Global GaN Power Device Market Trends:

The global GaN power device market is primarily driven by the increasing product applications across various end use industries. For instance, these devices are widely employed in lighting and braking control systems in electric vehicles (EVs) and hybrid electric vehicles (HEVs). GaN power devices are also extensively used in manufacturing healthcare scanning equipment like miniaturized X-ray machines, sonograms, and magnetic resonance imaging (MRI) for diagnostic accuracy and patient comfort. Besides this, they find applications in radars to improve navigation, facilitate real-time air traffic control and prevent collisions. Additionally, the implementation of stringent government policies regarding greenhouse gas (GHG) emissions is accelerating the sales of EVs and HEVs and encouraging the adoption of energy-efficient devices. Furthermore, the rapid penetration of the internet of things (IoT) and 5G technology have catalyzed the market growth. Looking forward, the market is anticipated to grow at a CAGR of 29.8% during 2024-2032.

Market Summary:

  • Based on the device type, the market has been divided into power devices (discrete and integrated power devices) and RF power devices (discrete and integrated RF power devices).
  • The market has been segregated based on the voltage range into <200 volt, 200-600 volt and >600 volt.
  • On the basis of the application, the market has been classified into power drives, power supply systems and radio frequency-based systems.
  • Based on the end-use industry, the market has been segmented into telecommunications, automotive, renewable power generation, military, aerospace and defense, consumer electronics, and others.
  • On the geographical front, the market has been categorized into North America (the United States and Canada), Asia Pacific (China, Japan, India, South Korea, Australia, Indonesia and others), Europe (Germany, France, the United Kingdom, Italy, Spain, Russia, and others), Latin America (Brazil, Mexico, and others), and the Middle East and Africa.
  • The competitive landscape of the market has also been examined in the report, with some of the key players being Efficient Power Conversion Corporation, Inc., GaN Systems Inc., IQE PLC, Koninklijke Philips N.V., MACOM Technology Solutions Inc., Microsemi Corporation (Microchip Technology Inc.), Mitsubishi Electric Corporation, Navitas Semiconductor Inc., Qorvo, Inc, Sumitomo Electric Industries, Ltd., Texas Instruments Incorporated, Toshiba Corporation and Wolfspeed Inc. (Cree Inc.).
     

Report Scope:

Report Features Details
Base Year of the Analysis 2023
Historical Period 2018-2023
Forecast Period 2024-2032
Units US$ Million
Segment Coverage Device Type, Voltage Range, Application, End-Use Industry, Region
Region Covered Asia Pacific, Europe, North America, Latin America, Middle East and Africa
Countries Covered United States, Canada, Germany, France, United Kingdom, Italy, Spain, Russia, China, Japan, India, South Korea, Australia, Indonesia, Brazil, Mexico
Companies Covered Efficient Power Conversion, GaN Systems Inc., IQE, Koninklijke Philips N.V., MACOM Technology Solutions, Microsemi Corporation (Microchip Technology Inc.), Mitsubishi Electric Corporation, Navitas Semiconductor Inc., Qorvo Inc., Sumitomo Electric Industries Ltd., Texas Instruments Incorporated, Toshiba Corporation and Wolfspeed Inc. (Cree Inc.)
Customization Scope 10% Free Customization
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Global GaN Power Device Market to Grow at 29.8% During 2024-2032, Bolstered by Increasing Industrial Applications
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