As per the latest report by IMARC Group, titled “GaN Power Device Market: Global Industry Trends, Share, Size, Growth, Opportunity and Forecast 2022-2027,” the global GaN power device market reached a value of US$ 187.1 Million in 2021. A gallium nitride (GaN) power device refers to a high electron mobility transistor (HEMT) that controls the free-moving electrons in the wide bandgap of semiconductors to generate electrical energy. It has higher electric-field strength, lesser on-resistance and lower output capacitance than silicon metal-oxide-semiconductor field-effect transistors (MOSFET). In recent years, GaN power devices have gained traction as they improve efficiency, conduct more electrons and decrease switch node ringing.

We are regularly tracking the direct effect of COVID-19 on the market, along with the indirect influence of associated industries. These observations will be integrated into the report.

Global GaN Power Device Market Trends:

The global GaN power device market is primarily driven by the increasing product applications across various end use industries. For instance, these devices are widely employed in lighting and braking control systems in electric vehicles (EVs) and hybrid electric vehicles (HEVs). GaN power devices are also extensively used in manufacturing healthcare scanning equipment like miniaturized X-ray machines, sonograms, and magnetic resonance imaging (MRI) for diagnostic accuracy and patient comfort. Besides this, they find applications in radars to improve navigation, facilitate real-time air traffic control and prevent collisions. Additionally, the implementation of stringent government policies regarding greenhouse gas (GHG) emissions is accelerating the sales of EVs and HEVs and encouraging the adoption of energy-efficient devices. Furthermore, the rapid penetration of the internet of things (IoT) and 5G technology have catalyzed the market growth. Looking forward, the market is anticipated to grow at a CAGR of 35.6% during 2022-2027.

Market Summary:

• Based on the device type, the market has been divided into power devices (discrete and integrated power devices) and RF power devices (discrete and integrated RF power devices).
• The market has been segregated based on the voltage range into <200 volt, 200-600 volt and >600 volt.
• On the basis of the application, the market has been classified into power drives, power supply systems and radio frequency-based systems.
• Based on the end-use industry, the market has been segmented into telecommunications, automotive, renewable power generation, military, aerospace and defense, consumer electronics, and others.
• On the geographical front, the market has been categorized into North America (the United States and Canada), Asia Pacific (China, Japan, India, South Korea, Australia, Indonesia and others), Europe (Germany, France, the United Kingdom, Italy, Spain, Russia, and others), Latin America (Brazil, Mexico, and others), and the Middle East and Africa.
• The competitive landscape of the market has also been examined in the report, with some of the key players being Efficient Power Conversion Corporation, Inc., GaN Systems Inc., IQE PLC, Koninklijke Philips N.V., MACOM Technology Solutions Inc., Microsemi Corporation (Microchip Technology Inc.), Mitsubishi Electric Corporation, Navitas Semiconductor Inc., Qorvo, Inc, Sumitomo Electric Industries, Ltd., Texas Instruments Incorporated, Toshiba Corporation and Wolfspeed Inc. (Cree Inc.).

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