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As per the latest report by IMARC Group, titled “GaN Power Device Market: Global Industry Trends, Share, Size, Growth, Opportunity and Forecast 2021-2026,” the global GaN power device market exhibited strong growth during 2015-2020. A gallium nitride (GaN) power device refers to a high electron mobility transistor (HEMT) that controls the free-moving electrons in the wide bandgap of semiconductors to generate electrical energy. It has higher electric-field strength, lesser on-resistance and lower output capacitance than silicon metal-oxide-semiconductor field-effect transistors (MOSFET). In recent years, GaN power devices have gained traction as they improve efficiency, conduct more electrons and decrease switch node ringing.
We are regularly tracking the direct effect of COVID-19 on the market, along with the indirect influence of associated industries. These observations will be integrated into the report.
Global GaN Power Device Market Trends:
The global GaN power device market is primarily driven by the increasing product applications across various end use industries. For instance, these devices are widely employed in lighting and braking control systems in electric vehicles (EVs) and hybrid electric vehicles (HEVs). GaN power devices are also extensively used in manufacturing healthcare scanning equipment like miniaturized X-ray machines, sonograms, and magnetic resonance imaging (MRI) for diagnostic accuracy and patient comfort. Besides this, they find applications in radars to improve navigation, facilitate real-time air traffic control and prevent collisions. Additionally, the implementation of stringent government policies regarding greenhouse gas (GHG) emissions is accelerating the sales of EVs and HEVs and encouraging the adoption of energy-efficient devices. Furthermore, the rapid penetration of the internet of things (IoT) and 5G technology have catalyzed the market growth. Looking forward, the market is anticipated to grow at a CAGR of around 19% during 2021-2026.
Market Summary:
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